Maos non-volatile memory structures with lower bandgap storage layer
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چکیده
2014 Introduction of a thin Si3N4 layer in metal-Al2O3-SiO2-Si (MAOS) memory structures leads to increased charge storage capability and reduced writing voltages for these MANOS structures. O2 annealing significantly affects these properties and the charging mechanism. Preliminary results on charge retention are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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تاریخ انتشار 2016